Semiconductor Device including a Conductive Feature Over an Active Region

ABSTRACT

A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No. 15/231,135, entitled “Semiconductor Device including a Conductive Feature Over an Active Region,” filed on Aug. 8, 2016, which is a divisional of U.S. patent application Ser. No. 14/515,276, entitled “Semiconductor Device and Method of Manufacturing Semiconductor Device,” filed on Oct. 15, 2014, (now U.S. Pat. No. 9,412,700 issued Aug. 9, 2016), which applications are hereby incorporated herein by reference.

This application is related to U.S. patent application Ser. No. 16/563,215, filed Sep. 6, 2019.

BACKGROUND

The recent trend in miniaturizing integrated circuits (ICs) has resulted in smaller devices which consume less power yet provide more functionality at higher speeds. For one or more of these advantages to be realized, various developments in IC design and/or manufacture are considered.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic cross-sectional view of a semiconductor device in accordance with some embodiments.

FIG. 2A is a schematic cross-sectional view of a semiconductor device in accordance with one or more embodiments.

FIG. 2B is a portion of a layout diagram of the semiconductor device shown in FIG. 2A in accordance with one or more embodiments.

FIG. 3A is a schematic cross-sectional view of a semiconductor device in accordance with one or more embodiments.

FIG. 3B is a portion of a layout diagram of the semiconductor device shown in FIG. 3A in accordance with one or more embodiments.

FIG. 4A is a portion of a layout diagram of a semiconductor device in accordance with one or more embodiments.

FIG. 4B is a schematic cross-sectional view of a portion of the semiconductor device shown in FIG. 4A accordance with one or more embodiments.

FIG. 5 is a flow chart of a method of manufacturing a semiconductor device in accordance with some embodiments.

FIGS. 6A-6F are schematic cross-sectional views of the semiconductor device of the method shown in FIG. 5 at various manufacturing stages in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. Further, when a first element is described as being “connected” or “coupled” to a second element, such description includes embodiments in which the first and second elements are directly connected or coupled to each other, and also includes embodiments in which the first and second elements are indirectly connected or coupled to each other with one or more other intervening elements in between.

FIG. 1 is a schematic cross-sectional view of a semiconductor device 100 in accordance with some embodiments. The semiconductor device 100 includes a substrate 102, an inter-layer dielectric (ILD) layer 106, gate structures 108 a, 108 b, 108 c and 108 d, a pair of first spacers 110 a and 112 a, a pair of second spacers 110 b and 112 b, a pair of third spacers 110 c and 112 c, a pair of fourth spacers 110 d and 112 d, insulating layers 114 a, 114 b, 114 c and 114 d, first conductive features 120, 122 and 124, silicided regions 126, a second conductive feature 130, a third conductive feature 132 and ILD layer 134.

The semiconductor device 100 includes active elements and/or passive elements. Examples of active elements include, but are not limited to, transistors and diodes. Examples of transistors include, but are not limited to, metal oxide semiconductor field effect transistors (MOSFET), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJT), high voltage transistors, high frequency transistors, p-channel and/or n-channel field effect transistors (PFETs/NFETs), etc.), FinFETs, and planar MOS transistors with raised source/drains. Examples of passive elements include, but are not limited to, capacitors, inductors, fuses, and resistors. In the example configuration illustrated in FIG. 1, the semiconductor device 100 is a portion of a transistor. The source feature (not shown), the drain feature (not shown), the channel feature (not shown) and the gate structure (e.g., gate structure 108 a, 108 b, 108 c or 108 d) together define the transistor.

The substrate 102 comprises bulk silicon, a semiconductor wafer, a silicon-on-insulator (SOI) substrate, or a silicon germanium substrate. Other semiconductor materials including group III, group IV, and group V elements are within the scope of various embodiments.

The substrate 102 comprises an active region 104 a and one or more isolation structures 104 b. The active region 104 a is isolated from other elements of the semiconductor device 100 by one or more isolation structures 104 b. The symbol 105 schematically illustrates that the described structures (e.g., active region 104 a or isolation structure 104 b) are arranged in various regions of semiconductor device 100 which are not homogeneous throughout in one or more embodiments.

The active region 104 a is a doped region of the substrate 102 and includes a source feature (not shown), a drain feature (not shown), and a channel feature (not shown) positioned between the source feature and drain feature. Examples of materials of the active region 104 a include, but are not limited to, semiconductor materials doped with various types of p-dopants and/or n-dopants. The active region 104 a is referred to herein as an oxide definition (OD) area or pattern.

The one or more isolation structures 104 b isolate the active region 104 a from other portions of the semiconductor device 100. In some embodiments, the one or more isolation structures 104 b are embedded in the substrate 102. In some embodiments, the one or more isolation structures 104 b are over the substrate 102. In some embodiments, the one or more isolation structures 104 b are shallow trench isolation (STI) structures.

The ILD layer 106 is over the active region 104 a or the isolation structure 104 b. The ILD layer 106 is also referred to herein as an ILD0 layer,” i.e. inter-layer dielectric-zero (ILD0) layer.

Gate structures 108 a, 108 b, 108 c and 108 d are over a top surface of a substrate 102. Gate structures 108 a and 108 b are over active region 104 a. Gate structure 108 c is over symbol 105. In some embodiments, gate structure 108 c is over active region 104 a. In some embodiments, gate structure 108 c is over isolation structure 104 b. Gate structure 108 d is over isolation structure 104 b. The illustrations shown in FIG. 1 are exemplary, and the number of gate structures over the active region 104 a or the one or more isolation structures varies. In some embodiments, gate structures 108 a and 108 b are over a channel region (not shown). In some embodiments, the gate structures 108 a, 108 b, 108 c and 108 d are referred to herein as a poly (PO) pattern and are schematically illustrated in the drawings with the label “PO.” Examples of materials of gate structure 108 a, 108 b, 108 c or 108 d include, but are not limited to, metal and polysilicon. In some embodiments, gate structure 108 a, 108 b, 108 c or 108 d comprises a dummy gate. In some embodiments, gate structure 108 a, 108 b, 108 c or 108 d comprises a metal gate. Gate structures 108 a, 108 b, 108 c and 108 d are adjacent with each other. In some embodiments, an adjacent gate structure is a gate structure within a predetermined distance of other gate structures in the semiconductor device 100. In some embodiments, a portion of the gate structure 108 a is removed.

A pair of first spacers 110 a and 112 a is on opposite sidewalls of the gate structure 108 a. The pair of first spacers 110 a and 112 a comprises, for instance, a dielectric layer. A height of the first spacer 110 a is less than the height of the first spacer 112 a. In some embodiments, the height of the first spacer 112 a is greater than the height of the gate structure 108 a. In some embodiments, the top surface of the first sidewall spacer 110 a is not coplanar with the top surface of the first sidewall spacer 112 a.

A pair of second spacers 110 b and 112 b is on opposite sidewalls of the gate structure 108 b. The pair of second spacers 110 b and 112 b comprises, for instance, a dielectric layer. In some embodiments, the height of the second spacer 110 b or 112 b is greater than the height of the gate structure 108 b.

A pair of third spacers 110 c and 112 c is on opposite sidewalls of the gate structure 108 c. The pair of third spacers 110 c and 112 c comprises, for instance, a dielectric layer. In some embodiments, the height of the third spacer 110 c or 112 c is greater than the height of the gate structure 108 c.

A pair of fourth spacers 110 d and 112 d is on opposite sidewalls of the gate structure 108 d. The pair of fourth spacers 110 d and 112 d comprises, for instance, a dielectric layer. In some embodiments, the height of the fourth spacer 110 d or 112 d is greater than the height of the gate structure 108 d.

Insulating layer 114 a is over gate structure 108 a. In some embodiments, the height of insulating layer 114 a is substantially equal to the height of the first spacer 112 a. In some embodiments, the top surface of insulating layer 114 a is substantially coplanar with the top surface of the first spacer 112 a. In some embodiments, a portion of the insulating layer 114 a is removed. In some embodiments, the insulating layer 114 a comprises a hard mask.

Insulating layer 114 b is over gate structure 108 b. In some embodiments, the height of insulating layer 114 b is substantially equal to the height of the second spacer 110 b or 112 b. In some embodiments, the top surface of insulating layer 114 b is substantially coplanar with the top surface of the second spacer 110 b or 112 b. In some embodiments, a portion of the insulating layer 114 b is removed. In some embodiments, the insulating layer 114 b comprises a hard mask. In some embodiments, the insulating layer 114 b is embedded between the pair of second spacers 110 b and 112 b.

Insulating layer 114 c is over gate structure 108 c. In some embodiments, the height of insulating layer 114 c is substantially equal to the height of the third spacer 110 c or 112 c. In some embodiments, the top surface of insulating layer 114 c is substantially coplanar with the top surface of the third spacer 110 c or 112 c. In some embodiments, a portion of the insulating layer 114 c is removed. In some embodiments, the insulating layer 114 c comprises a hard mask. In some embodiments, the insulating layer 114 c is embedded between the pair of third spacers 110 c and 112 c.

Insulating layer 114 d is over gate structure 108 d. In some embodiments, the height of insulating layer 114 d is substantially equal to the height of the fourth spacer 110 d or 112 d. In some embodiments, the top surface of insulating layer 114 d is substantially coplanar with the top surface of the fourth spacer 110 d or 112 d. In some embodiments, a portion of the insulating layer 114 d is removed. In some embodiments, the insulating layer 114 d comprises a hard mask. In some embodiments, the insulating layer 114 d is embedded between the pair of fourth spacers 110 d and 112 d.

First conductive feature 120, 122 or 124 is over semiconductor device 100 to provide electrical connections to the semiconductor device 100.

First conductive feature 120 is embedded in the ILD layer 106 to provide electrical connection to the gate structure 108 a and the corresponding exposed source/drain features (e.g., active region 104 a) of gate structure 108 a or 108 b. In some embodiments, the top surface of the first conductive feature 120 is coplanar with a top surface of the insulating layer 114 a, 114 b, 114 c or 114 d. In some embodiments, the first conductive feature 120 has a varied thickness. In some embodiments, the first conductive feature 120 has a tapered shape. In some embodiments, the first conductive feature 120 has an L-shape.

First conductive feature 122 is embedded in the ILD layer 106 to provide electrical connection to the exposed source/drain features (e.g., active region 104 a) of gate structure 108 b or 108 c. In some embodiments, the top surface of the first conductive feature 122 is coplanar with a top surface of the insulating layer 114 a, 114 b, 114 c or 114 d. First conductive features 120, 122 and 124 are over the active region 104 a, and belong to a lower conductive layer referred to herein as MD1 layer or pattern. The MD1 layer is a metal-zero-over-oxide layer and is schematically illustrated in the drawings with the label “MD1.”

First conductive feature 124 extends at least partially into the isolation structure 104 b. First conductive feature 124 is over the isolation structure 104 b, and belongs to a lower conductive layer referred to herein as MD1 layer or pattern. In some embodiments, the top surface of the first conductive feature 124 is coplanar with a top surface of the insulating layer 114 a, 114 b, 114 c or 114 d. In some embodiments, first conductive feature 124 is embedded in the isolation structure 104 b.

Silicided regions 126 are between the first conductive features 120 and 122 and the top surface of the active region 104 a (e.g., source/drain features) of semiconductor device 100.

Second conductive feature 130 is over and electrically coupled to the corresponding first conductive feature 120. Second conductive feature 130 is referred to herein as a metal-zero-over-polysilicon (MP) layer or pattern and is schematically illustrated in the drawings with the label “MP.” In some embodiments, the second conductive feature 130 is in direct electrical contact with the gate structure 108 a. In some embodiments, the second conductive feature 130 is in direct electrical contact with the corresponding first conductive feature 120. The illustrations shown in FIG. 1 are exemplary, and the number of second conductive features 130 varies. In some embodiments, second conductive feature 130 is electrically connected to more than one first conductive feature. In some embodiments, the top surface of the first conductive feature 120 is coplanar with the top surface of the second conductive feature 130. In some embodiments, the second conductive feature 130 has a varied thickness. In some embodiments, the second conductive feature 130 has a tapered shape. In some embodiments, the second conductive feature 130 has an L-shape. In some embodiments, the second conductive feature 130 has a U-shape. In some embodiments, a portion of the second conductive feature 130 is embedded in the first conductive feature 120. In some embodiments, a material of the second conductive feature 130 is substantially similar to the material of the first conductive feature 120. In some embodiments, a portion of the second conductive feature 130 is embedded between the first conductive feature 120, the gate structure 108 a and the pair of first spacers 110 a and 112 a. In some embodiments, the second conductive feature 130 is directly on the first spacer 110 a. In some embodiments, the second conductive feature 130 is electrically connected to the gate structure 108 a.

Third conductive feature 132 is over first conductive features 120, 122 and 124, and second conductive feature 130. Third conductive feature 132 is embedded in ILD layer 134. Third conductive feature 132 belongs to an upper conductive layer referred to herein as MD2 layer or pattern. The MD2 layer is also a metal-zero-over-oxide layer and is schematically illustrated in the drawings with the label “MD2.”

Third conductive feature 132 is over the gate structures 108 a, 108 b, 108 c and 108 d. In some embodiments, third conductive feature 132 is electrically coupled to the source/drain of gate structure 108 b or 108 c by first conductive feature 122. In some embodiments, third conductive feature 132 is configured to provide an electrical connection to the first conductive features 120 and 122 or the second conductive feature 130. In some embodiments, third conductive feature 132 is configured to provide an electrical connection to the active region 104 a of the semiconductor device 100. In some embodiments, third conductive feature 132 is configured to provide an electrical connection to one or more isolation regions (e.g., isolation structure 104 b) of the semiconductor device 100.

In some embodiments, third conductive feature 132 is electrically coupled to first conductive features 122 or 124. In some embodiments, insulating layers 114 b, 114 c and 114 d electrically insulate the corresponding gate structures 108 b, 108 c and 108 d from the third conductive feature 132. In some embodiments, third conductive feature 132 is over the active region 104 a. In some embodiments, third conductive feature 132 is over the isolation structure 104 b. The illustrations shown in FIG. 1 are exemplary, and the number of third conductive features 132 varies. In some embodiments, third conductive feature 132 is electrically connected to one or more of the first conductive features 120, 122 and 124. In some embodiments, third conductive feature 132 is electrically connected to one or more second conductive features 130. In some embodiments, third conductive feature 132 is electrically connected to other layers (not shown) in the semiconductor device 100. In some embodiments, the second conductive feature 130 is configured to provide a larger contact area to the gate structure 108 a when compared with similar conductive features positioned above the gate structure 108 a.

The ILD layer 134 is over the ILD layer 106. The ILD layer 134 is also referred to herein as an “ILD1 layer,” i.e. inter-layer dielectric-one (ILD1) layer.

The MP, MD1 and MD2 layers are independently chosen from conductive materials and belong to a first (i.e., lowermost) conductive material layer over the substrate 102 referred to herein as “MO layer,” i.e., metal-zero (MO) layer, which is the lowermost metal layer of the semiconductor device 100. In some embodiments, the MP, MD1 and MD2 layers are metal and belong to first metal layer MO. The MO layer is schematically illustrated in the drawings with the label “MO.” In at least one embodiment, the MO layer is formed in two steps. For example, in a first step, the lower portion, i.e., the top surface of the MD1 and MP layers, are substantially coplanar with the insulating layers 114 a. 114 b, 114 c and 114 d. In a second step, the upper portion, i.e., the MD2 layer, is formed over the corresponding MD1 and MP layers and gate structures 108 a, 108 b, 108 c and 108 d. In some embodiments, the MO layer is referred to as the local interconnect layer.

In some embodiments, one or more of the MD1, MP and MD2 layers provide electrical connections between various elements of the semiconductor device 100 and/or between one or more elements of the semiconductor device 100 and external circuitry. The above-described structure is an example configuration, and other arrangements of electrical connections among elements of the semiconductor device 100 are contemplated in various embodiments. For example, in one or more embodiments, one or more via layers (not shown) are over and connected to the MO layer. In some embodiments, the one or more via layers (not shown) provide electrical connection to further metal layers (not shown) over the MO layer.

FIG. 2A is a schematic cross-sectional view of a semiconductor device 200 in accordance with one or more embodiments. Semiconductor device 200 is an embodiment of semiconductor device 100 shown in FIG. 1 with similar elements. As shown in FIG. 2A, similar elements have a same reference number as shown in FIG. 1. In comparison with FIG. 1, the semiconductor device 200 of FIG. 2A does not include isolation structure 104 b, ILD 106, gate structure 108 d, pair of fourth spacers 110 d and 112 d, insulating layers 114 b and 114 d, first conductive feature 124, second conductive feature 130 and third conductive feature 132.

In comparison with FIG. 1, the semiconductor device 200 comprises a transistor 201 and a second conductive feature 230. Second conductive feature 230 is an embodiment of second conductive feature 130 shown in FIG. 1. First conductive feature 220 is an embodiment of first conductive feature 120 shown in FIG. 1. First spacer 210 a is an embodiment of first spacer 110 a shown in FIG. 1. Second spacer 212 b is an embodiment of second spacer 112 b shown in FIG. 1.

Transistor 201 comprises active region 104 a (which includes a source feature (not shown), a drain feature (not shown), and a channel region (not shown)) and a gate structure 108 b.

In comparison with FIG. 1, the second conductive feature 230 is electrically connected to the gate structure 108 b. Second conductive feature 230 is electrically coupled to the corresponding first conductive feature 220. In some embodiments, the second conductive feature 230 is in direct contact with the gate structure 108 b. While FIG. 2A does not show an insulating layer 114 b over the gate structure 108 b, other embodiments exist where a portion of the insulating layer 114 b is over the gate structure 108 b, and the second conductive feature 230 is in direct contact with the top surface of the gate structure 108 b and the remaining portion of the insulating layer 114 b. In some embodiments, the second conductive feature 230 is in direct electrical contact with the corresponding first conductive feature 220. In some embodiments, the top surface of the first conductive feature 220 is coplanar with the top surface of the second conductive feature 230. In some embodiments, the second conductive feature 230 has a tapered shape. In some embodiments, the second conductive feature 230 has an L-shape. In some embodiments, the second conductive feature 230 has a U-shape. In some embodiments, a portion of the second conductive feature 230 is embedded in the first conductive feature 220. In some embodiments, a portion of the second conductive feature 230 is positioned between the first conductive feature 220, the gate structure 108 b and the pair of second spacers 210 b and 212 b. In some embodiments, a portion of the second conductive feature 230 is embedded in the first conductive feature 220, the gate structure 108 b and the pair of second spacers 210 b and 212 b.

In some embodiments, the second conductive feature 230 is directly on the second spacer 212 b. In some embodiments, the height of the second spacer 110 b with respect to the top of substrate 102 is greater than the height of the second spacer 212 b with respect to the top of substrate 102. In some embodiments, the height of the first spacer 210 a with respect to the top of substrate 102 is substantially equal to the height of the first spacer 112 a with respect to the top of substrate 102. In some embodiments, the second conductive feature 230 is configured to provide a larger contact area to the gate structure 108 b when compared with similar conductive features positioned above the gate structure 108 b. In some embodiments, a material of the second conductive feature 230 is substantially similar to the material of the first conductive feature 220.

FIG. 2B is a portion of a layout diagram 200′ of the semiconductor device shown in FIG. 2A in accordance with one or more embodiments. The layout diagram 200′ of FIG. 2B is a top-view of a portion of the semiconductor device shown in FIG. 2A, and includes similar elements having a same reference number as shown in FIG. 2A. One or more of the layout patterns described herein are usable to prepare a set of masks usable for manufacturing a memory cell in an integrated circuit. The layout diagram 200′ of semiconductor device 200 is a basis to be modified to form other layout structures, such as those described herein, e.g., FIGS. 3B and 4.

Layout diagram 200′ includes active region 104 a, gate structures 108 a, 108 b and 108 c, first conductive features 122 and 220, isolation region 204, second conductive feature 230 and power rail 202. Isolation region 204 is an embodiment of isolation structure 104 b shown in FIG. 1.

The active region 104 a extends continuously in the width direction (i.e., in the horizontal direction of FIG. 2B). Active region 104 a comprises drain feature D and source feature S. Active region 104 a is electrically isolated from the power rail 202 by isolation region 204.

The gate structures 108 a, 108 b and 108 c extend continuously in the height direction (i.e., in the vertical direction of FIG. 2B). The gate structures 108 a, 108 b and 108 c extend over the active region 104 a and across the isolation structure 204. The gate structures 108 a, 108 b and 108 c are electrically isolated from each other by isolation region 204.

The power rail 202 extends in the width direction (i.e., in the horizontal direction of FIG. 2B). In some embodiments, the power rail 202 is configured to provide electrical power to the semiconductor device 200.

Transistor device 201 comprises gate structure 108 b, source feature S and drain feature D. The first conductive feature 122 (e.g., MD1) is electrically connected to the drain feature D of the transistor device 201. The first conductive feature 220 (e.g., MD1) is electrically connected to the source feature S of the transistor device 201. The gate structure 108 b is electrically connected to the source feature S of the transistor device 201 by second conductive feature 230 (e.g., MP) and first conductive feature 220 (e.g., MD1). In some embodiments, the gate structure 108 b is directly connected to the second conductive feature 230 (e.g., MP). In some embodiments, the second conductive feature 230 (e.g., MP) is directly connected to the first conductive feature 220 (e.g., MD1). In some embodiments, the first conductive feature 220 (e.g., MD1) is connected to the source feature S.

FIG. 3A is a schematic cross-sectional view of a semiconductor device 300 in accordance with one or more embodiments. Semiconductor device 300 is an embodiment of semiconductor device 200 shown in FIG. 2A with similar elements. As shown in FIG. 3A, similar elements have a same reference number as shown in FIG. 2A.

In comparison with FIG. 1, the semiconductor device 200 comprises a transistor 301, a second conductive feature 230 and second spacer 310 b. Second conductive feature 330 is an embodiment of second conductive feature 230 shown in FIG. 2A. Second spacer 310 b is an embodiment of first spacer 110 a shown in FIG. 2A.

Transistor 301 comprises active region 104 a (which includes a source feature (not shown), a drain feature (not shown), and a channel region (not shown)) and a gate structure 108 b.

The second conductive feature 230 is electrically connected to the gate structure 108 b. Second conductive feature 230 is electrically coupled to the corresponding first conductive features 220 and 322. In some embodiments, the second conductive feature 330 is in direct contact with the gate structure 108 b. In some embodiments, the second conductive feature 330 is in direct electrical contact with the corresponding first conductive features 220 and 322. In some embodiments, the top surface of the first conductive feature 220 or 322 is coplanar with the top surface of the second conductive feature 330. In some embodiments, the second conductive feature 330 has a tapered shape. In some embodiments, the second conductive feature 330 has an L-shape. In some embodiments, the second conductive feature 330 has a U-shape. In some embodiments, a portion of the second conductive feature 330 is embedded in the first conductive feature 220 or 322. In some embodiments, a portion of the second conductive feature 330 is positioned between the first conductive feature 220, the gate structure 108 b, the pair of second spacers 310 b and 212 b and the first conductive feature 322. In some embodiments, a portion of the second conductive feature 330 is embedded in the first conductive feature 220 or 322, the gate structure 108 b and the pair of second spacers 310 b and 212 b. In some embodiments, the second conductive feature 330 is directly on the second spacer 212 b or 310 b. In some embodiments, the height of the second spacer 310 b is substantially equal to the height of the second spacer 212 b. In some embodiments, the second conductive feature 330 is configured to provide a larger contact area to the gate structure 108 b when compared with similar conductive features positioned above the gate structure 108 b. In some embodiments, a material of the second conductive feature 330 is substantially similar to the material of the first conductive feature 220 or 322.

FIG. 3B is a portion of a layout diagram 300′ of the semiconductor device shown in FIG. 3A in accordance with one or more embodiments. The layout diagram 300′ of FIG. 3B is a top-view of a portion of the semiconductor device shown in FIG. 3A. The layout diagram 300′ of FIG. 3B is a top-view of a portion of the semiconductor device shown in FIG. 3A, and includes similar elements having a same reference number as shown in FIG. 3A. One or more of the layout patterns described herein are usable to prepare a set of masks usable for manufacturing a memory cell in an integrated circuit. The layout diagram 300′ of semiconductor device 300 is a basis to be modified to form other layout structures, such as those described herein, e.g., FIGS. 2B and 4.

Layout diagram 300′ is an embodiment of layout diagram 200′ shown in FIG. 2B with similar elements. As shown in FIG. 3B, similar elements have a same reference number as shown in FIG. 2B.

Layout diagram 300′ includes active region 104 a, gate structures 108 a, 108 b and 108 c, first conductive features 322 and 220, isolation region 204, second conductive feature 330. Isolation region 204 is an embodiment of isolation structure 104 b shown in FIG. 1.

The active region 104 a extends continuously in the width direction (i.e., in the horizontal direction of FIG. 3B). Active region 104 a comprises drain feature D and source feature S. Active region 104 a is electrically isolated from other portions of semiconductor device 300 by isolation region 204.

The gate structures 108 a, 108 b and 108 c extend continuously in the height direction (i.e., in the vertical direction of FIG. 3B). The gate structures 108 a, 108 b and 108 c extend over the active region 104 a and across the isolation structure 204. The gate structures 108 a, 108 b and 108 c are electrically isolated from each other by isolation region 204.

Transistor device 301 comprises gate structure 108 b, source feature S and drain feature D. The first conductive feature 322 (e.g., MD1) is electrically connected to the drain feature D of the transistor device 201. The gate structure 108 b is electrically connected to the drain feature D of the transistor device 301 by second conductive feature 330 (e.g., MP) and first conductive feature 322 (e.g., MD1). In some embodiments, the gate structure 108 b is directly connected to the second conductive feature 330 (e.g., MP). In some embodiments, the second conductive feature 330 (e.g., MP) is directly connected to the first conductive feature 322 (e.g., MD1). In some embodiments, the first conductive feature 322 (e.g., MD1) is connected to the drain feature D.

The first conductive feature 220 (e.g., MD1) is electrically connected to the source feature S of the transistor device 301. The gate structure 108 b is electrically connected to the source feature S of the transistor device 301 by second conductive feature 330 (e.g., MP) and first conductive feature 220 (e.g., MD1). In some embodiments, the second conductive feature 330 (e.g., MP) is directly connected to the first conductive feature 220 (e.g., MD1). In some embodiments, the first conductive feature 220 (e.g., MD1) is connected to the source feature S.

FIG. 4A is a portion of a layout diagram 400 of a semiconductor device in accordance with one or more embodiments. The layout diagram 400 of FIG. 4A is an embodiment of the layout diagram 200′ shown in FIG. 2B. As shown in FIG. 4A, similar elements have a same reference number as shown in FIG. 2B. One or more of the layout patterns described herein are usable to prepare a set of masks usable for manufacturing a memory cell in an integrated circuit. The layout diagram 400 of the semiconductor device is a basis to be modified to form other layout structures, such as those described herein, e.g., FIGS. 2B, 3B and 6A-6F.

Layout diagram 400 includes active regions 404 a and 404 b, gate structures 408 a, 408 b, 408 c and 408 d, isolation region 404, second conductive feature 430 and third conductive features 432 a and 432 b.

Active regions 404 a and 404 b are an embodiment of active region 104 a shown in FIG. 2B. Gate structures 408 a, 408 b, 408 c and 408 d are an embodiment of gate structures 108 a, 108 b, 108 c and 108 d shown in FIG. 1. Isolation region 404 is an embodiment of isolation structure 104 b shown in FIG. 1. Second conductive feature 430 is an embodiment of second conductive feature 130 shown in FIG. 1. Third conductive features 432 a and 432 b are an embodiment of third conductive feature 132 shown in FIG. 1.

Active regions 404 a and 404 b extend in the width direction (i.e., in the horizontal direction of FIG. 4A). Active region 404 a is electrically isolated from the active region 404 b by isolation region 404. In some embodiments, active regions 404 a and 404 b include p or n doped materials.

The gate structures 408 a, 408 b, 408 c and 408 d extend in the height direction (i.e., in the vertical direction of FIG. 4A). The gate structures 408 a, 408 b, 408 c and 408 d extend over the active regions 404 a and 404 b, and across the isolation structure 404. The gate structures 408 a, 408 b, 408 c and 408 d are electrically isolated from each other by isolation region 404.

The second conductive feature 430 (e.g., MP) extends in the width direction (i.e., in the horizontal direction of FIG. 4A). In some embodiments, second conductive feature 430 (e.g., MP) is electrically connected to the gate structure 408 c. In some embodiments, second conductive feature 430 (e.g., MP) is directly connected to the gate structure 408 c. In some embodiments, second conductive feature 430 (e.g., MP) is arranged to extend across isolation region 404.

The third conductive feature 432 a (e.g., MD2) extends in the width direction (i.e., in the horizontal direction of FIG. 4A). In some embodiments, third conductive feature 432 a (e.g., MD2) is electrically connected to the source/drain features (e.g., active region 404 a) of the gate structure 408 c.

In some embodiments, third conductive feature 432 a (e.g., MD2) extends across active regions 404 a and 404 b. In some embodiments, third conductive feature 432 a (e.g., MD2) is arranged to extend over active region 404 a without being electrically connected to the gate structure 408 c.

The third conductive feature 432 b (e.g., MD2) extends in the height direction (i.e., in the vertical direction of FIG. 4A). In some embodiments, third conductive feature 432 b (e.g., MD2) is electrically connected to the source/drain feature (e.g., active region 404 a) and the source/drain feature (e.g., active region 404 b). In some embodiments, third conductive feature 432 b (e.g., MD2) is arranged to extend across isolation region 404.

FIG. 4B is a schematic cross-sectional view of a portion of the semiconductor device 400′ shown in FIG. 4A in accordance with one or more embodiments. The schematic cross-sectional diagram 400′ of FIG. 4B is a cross-sectional view of a portion of the layout 400 shown in FIG. 4A, and includes similar elements having a same reference number as shown in FIG. 4A. Semiconductor device 400′ is an embodiment of semiconductor device 100 shown in FIG. 1 with similar elements. As shown in FIG. 4B, similar elements have a same reference number as shown in FIG. 1.

Third conductive feature 432 a (e.g., MD2) is over gate structure 408 c, insulating layer 414 c and first conductive features 122 and 124 (e.g., MD1). As shown in FIG. 4B, third conductive feature 432 a (e.g., MD2) is arranged to extend over active region 404 a without being electrically connected to the gate structure 408 c. As shown in FIG. 4B, third conductive feature 432 a (e.g., MD2) is electrically isolated from the gate structure 408 c by insulating layer 414 c. As shown in FIG. 4B, third conductive feature 432 a (e.g., MD2) is electrically connected to first conductive features 122 and 124 (e.g., MD1), without being electrically connected to the gate structure 408 c.

FIG. 5 is a flow chart of a method 500 of manufacturing a semiconductor device 600F (shown in FIG. 6F), in accordance with some embodiments. FIGS. 6A-6F are schematic cross-sectional views of the semiconductor device 600F at various manufacturing stages, in accordance with some embodiments. Semiconductor device 600F is an embodiment of semiconductor device 100 shown in FIG. 1 with similar elements. As shown in FIGS. 6A-6F, similar elements have a same reference number as shown in FIG. 1.

One or more effects discussed herein with respect to FIGS. 1-4 is/are obtainable in the manufacturing method 500 in accordance with some embodiments.

At operation 502 of the method 500, an active region 104 a is formed in a substrate 102. The substrate 102 comprises, in at least one embodiment, a silicon substrate. The substrate 102 comprises, in at least one embodiment, silicon germanium (SiGe), Gallium arsenic, or other suitable semiconductor materials. In at least one embodiment, the isolation structures 104 b (e.g., shallow trench isolation (STI) regions) are formed in the substrate 102 for isolating active area 104 a in the substrate 102. Example materials of the STI regions 104 b include, but are not limited to, silicon oxide, silicon nitride, silicon oxynitride, fluoride-doped silicate, and/or any other low k dielectric materials. In some embodiments, the substrate 102 further includes one or more other features, such as various doped regions, a buried layer, and/or an epitaxy (epi) layer. In some embodiments, the substrate 102 comprises a semiconductor on insulator, such as silicon on insulator (SOI). In some embodiments, the substrate 102 includes a doped epi layer, a gradient semiconductor layer, and/or a semiconductor layer overlying another semiconductor layer of a different type such as a silicon layer on a silicon germanium layer. In some embodiments, operation 502 is optional, where a semiconductor device having an active region is already formed.

At operation 504 of the method 500, at least a first gate structure 108 a and a second gate structure 108 b are formed on the substrate 102. In some embodiments, in operation 504, a first gate structure 108 a, a second gate structure 108 b, a third gate structure 108 c and a fourth gate structure 108 d are formed on the substrate 102 (as shown in FIG. 6A).

In some embodiments, the gate structures 108 a, 108 b, 108 c and 108 d are formed over the substrate 102 including a gate dielectric (not shown) on the substrate 102. Example materials of the gate dielectric include, but are not limited to, a high-k dielectric layer, an interfacial layer, and/or combinations thereof. Example materials for the high-k dielectric layer include, but are not limited to, silicon nitride, silicon oxynitride, hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, metal aluminates, zirconium silicate, zirconium aluminate, zirconium oxide, titanium oxide, aluminum oxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-k dielectric materials, and/or combinations thereof. The thickness of the high-k dielectric layer is in the range of, for instance, about 5 angstroms (Å) to about 40 Å. In some embodiments, the gate dielectric is formed over the substrate 102 by atomic layer deposition (ALD) or other suitable techniques.

In some embodiments, the gate structures 108 a, 108 b, 108 c and 108 d further include a gate electrode (not shown) formed over the gate dielectric (not shown). The thickness of the gate electrode ranges, for instance, from about 10 to about 500 Å. The gate electrode is formed of poly-silicon or metal. In one or more embodiments, the gate electrode comprises Al, AlTi, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, MoN, and/or other suitable conductive materials. In some embodiments, the gate electrode is formed by chemical vapor deposition (CVD), physical vapor deposition (PVD or sputtering), plating, atomic layer deposition (ALD), and/or other suitable processes.

At operation 506 of the method 500, an insulating layer (e.g., shown in FIG. 5A as insulating layer 114 a and 114 b) is formed on at least a first gate structure 108 a and a second gate structure 108 b. In some embodiments, in operation 506, an insulating layer (e.g., shown in FIG. 5A as insulating layer 114 a, 114 b, 114 c and 114 d) is formed on gate structures 108 a, 108 b, 108 c and 108 d. In some embodiments, insulating layer 114 a, 114 b, 114 c and 114 d comprises a hard mask 521. In some embodiments, the insulating layer 114 a, 114 b, 114 c and 114 d includes silicon nitride, silicon oxynitride, silicon carbide or other suitable materials. In some embodiments, the insulating layer 114 a, 114 b, 114 c and 114 d is formed, in at least one embodiment, by a deposition process or any suitable methods, and used as a mask to pattern the gate structures 108 a, 108 b, 108 c and 108 d.

At operation 508 of the method 500, a pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) are formed on each sidewall of the gate structures (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d).

The pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) are formed on sidewalls of the gate structures (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d). The pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) comprises, for instance, a dielectric layer. In one or more embodiments, the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is formed of silicon nitride. In some embodiments, the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) includes oxynitride. In some embodiments, the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is formed of silicon carbide. In some embodiments, the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) contains an impurity, such as boron, carbon, fluorine, or combinations thereof. In some embodiments, the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is formed by suitable methods. First, a layer for the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is deposited over the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d) and the substrate 102, for example, by plasma enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), sub-atmospheric chemical vapor deposition (SACVD), atomic layer deposition (ALD), and the like. The layer for the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is formed to have a suitable thickness, e.g., in the range of about 50 Å to about 400 Å. Further, the deposited layer for the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is patterned to form the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) in contact or adjacent to the sidewalls of the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d). The patterning is performed, in at least one embodiment, by suitable techniques, such as a wet etch process, a dry etch process, or combinations thereof. In one or more embodiments, the patterning to form the pair of spacers (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is conducted by an anisotropic dry etching process.

The above description where the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d) is formed before the spacer (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) is referred to as a gate-first process. In an alternative, gate-last process, the same or similar steps of the gate-first process is performed to form a dummy gate, e.g., dummy poly-silicon, and the spacer (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d). The dummy gate is replaced afterwards with a suitable metal or conductive material to obtain the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d).

Further, source and drain features are formed in an active area 104 a of the substrate 102 by using the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d) and the spacer (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) as a mask. Thus, the active area 104 a includes the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d) and the source and drain features adjacent the gate structure (e.g., first gate structure 108 a, second gate structure 108 b, gate structures 108 c and 108 d). For example, the formation of the source/drain features is performed by an ion implantation or a diffusion process. Depending on the type of the semiconductor device, the source/drain features are doped with p-type dopants, such as boron or BF₂, n-type dopants, such as phosphorus or arsenic, and/or combinations thereof. In some embodiments, lightly doped source/drain (LDD) regions are formed in the substrate 102 prior to the formation of the spacer (e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d), by one or more implantation processes, such as an ion implantation process.

In some embodiments, an inter-layer dielectric (ILD) layer 106 is formed over the substrate 102. A resulting semiconductor device structure 600A is obtained as shown in FIG. 6A. In some embodiments, the resulting semiconductor device structure 600A as shown in FIG. 6A is a useful intermediary which is connected to other materials for further processing. The ILD layer 106 is also referred to herein as an ILD0 layer. Example materials of the ILD layer 106 include, but are not limited to, SiNx, SiOx, SiON, SiC, SiBN, SiCBN, or combinations thereof. In at least one embodiment, the ILD layer 106 is formed using high-density plasma (HDP), although other methods such as Sub-Atmospheric Pressure Chemical Vapor Deposition (SACVD), Lower Pressure Chemical Vapor Deposition (LPCVD), ALD, Plasma enhanced ALD (PEALD), Plasma enhanced CVD (PECVD), Monolayer Deposition (MLD), Plasma Impulse CVD (PICVD), spin-on, or the like are used in various embodiments.

In some embodiments, a further ILD layer 602, referred to herein as an ILD1 layer, is formed over the ILD layer 106. The ILD layer 602 is also referred to herein as an ILD0 layer. Example materials of the ILD layer 602 include, but are not limited to, SiNx, SiOx, SiON, SiC, SiBN, SiCBN, or combinations thereof. In at least one embodiment, the ILD layer 106 is formed using HDP, although other methods such as SACVD, LPCVD, ALD, PEALD, PECVD, MLD, PICVD, spin-on, or the like are used in various embodiments.

In some embodiments, a hard mask layer 604 is deposited over the ILD layer 602. In some embodiments, the hard mask layer 604 includes silicon nitride, silicon oxynitride, silicon carbide or other suitable materials. In some embodiments, the hard mask layer 604 is formed, in at least one embodiment, by a deposition process or any suitable methods, and used as a mask to pattern the first contact features 120, 122 and 124 (as shown in FIG. 600E).

In some embodiments, an anti-reflective coating (ARC) layer 606 is deposited over the hard mask layer 604. In some embodiments, the ARC layer 606 is a bottom ARC (BARC) layer. In some embodiments, the ARC layer 606 includes a single layer or multiple layers. In some embodiments, the ARC layer 606 includes a dielectric material including an oxide; an organic polymer material, low-k dielectrics; high-k dielectrics; any other suitable material; or combinations thereof. In some embodiments, the ARC layer 606 is formed using any appropriate method, including in this case a spin-on coater or other suitable processes.

In some embodiments, a photoresist layer 608 is deposited over the ARC layer 606. In some embodiments, the photoresist layer 608 is used to pattern the hard mask layer 604 to define, at least in part, the dimensions of the first contact features 120, 122, and 124. In some embodiments, the photoresist layer 608 and the ARC layer 606 are selectively removed from regions 610 a and 610 b over the top surface of the hard mask layer 604. A resulting semiconductor device structure 500B is obtained as shown in FIG. 5B.

In some embodiments, the remaining ARC layer 606, photoresist layer 608 and a portion of the hard mask layer 604 uncovered by both the ARC layer 606 and photoresist layer 608 (e.g., regions 610 a and 610 b) are selectively removed, e.g., by a photolithography process followed by an etching process, to expose the underlying first conductive regions 612 a, 612 b and 612 c. In some embodiments, the etching process removes portions of the ILD layer 106 located between at least two or more gate structures (e.g., gate structure 108 a, 108 b, 108 c or 108 d) forming regions 612 b and 612 c. In some embodiments, the etching process removes portions of the STI region (e.g., isolation structure 104 b) forming region 612 a. The hard mask layer 604 remains over the ILD layer 106 and a portion of ILD layer 602 so as not to expose the underlying ILD layer 106 to the etch process. A resulting semiconductor device structure 600C is obtained as shown in FIG. 6C. In some embodiments, the resulting semiconductor device structure 600C as shown in FIG. 6C is a useful intermediary which is connected to other materials for further processing.

At operation 510 of the method 500, a portion 612 d of insulating layer (e.g., insulating layer 114 a, 114 b, 114 c or 114 d) over at least one of the gate structures (e.g., gate structure 108 a, 108 b, 108 c or 108 d) is etched. In some embodiments, in operation 510, a portion 612 d of insulating layer (e.g., insulating layer 114 a) over the first gate structure 108 a is etched (as shown in FIG. 6C).

At operation 512 of the method 500, at least a portion of at least one gate structure (e.g., gate structure 108 a, 108 b, 108 c or 108 d) is etched exposing the remaining portion of the gate structure (e.g., gate structure 108 a, 108 b, 108 c or 108 d). In some embodiments, in operation 512, at least a portion of the first gate structure (e.g., gate structure 108 a) is chemically etched (as shown in FIG. 6D) exposing the remaining portion of the first gate structure (e.g., gate structure 108 a). In some embodiments, operation 512 is optional. A resulting semiconductor device structure 600D is obtained as shown in FIG. 6D. In some embodiments, the resulting semiconductor device structure 600D as shown in FIG. 6D is a useful intermediary which is connected to other materials for further processing.

In some embodiments, before forming the first conductive features 120, 122 and 124 (e.g., the MD1 layer), a silicidation (e.g., self-aligned silicidation) process or a suitable method is performed to provide the top surfaces of the source/drain features (e.g., active region 104 a) with silicided regions 126 as contact features. For example, a metal layer is blanket-deposited over the exposed source/drain features (e.g., active region 104 a), and then an annealing step is performed to form metal silicide layers on the source/drain features (e.g., active region 104 a). Unreacted metal is subsequently removed, e.g., by a wet chemical etch.

At operation 514 of the method 500, a first conductive feature 120, 122 or 124 (e.g., MD1) is formed over the active region 104 a, or a second conductive feature 130 (e.g., MP) is formed over a portion 612 d of the etched insulating layer (e.g., insulating layer 114 a, 114 b, 114 c or 114 d) to be in direct electrical contact with the active region 104 a. A resulting semiconductor device structure 600E is obtained as shown in FIG. 6E. For example, as shown in FIG. 6E, a conductive material is formed to fill the openings 612 a, 612 b and 612 c, and then planarized, to obtain corresponding first conductive feature 120, 122 or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP). In some embodiments, the planarizing process comprises, for example, a chemical mechanical polish (CMP) process.

In the example configuration illustrated in FIG. 5E, the first conductive feature 124 extends at least partially into the STI region (e.g., isolating structure 104 b), whereas first conductive features 120 and 122 make electrical connection with the corresponding exposed source/drain features (e.g., active region 104 a). In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) and the second conductive feature 130 (e.g., MP) are formed of the same conductive materials. In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) and the second conductive feature 130 (e.g., MP) are formed of different conductive materials. In some embodiments, a top surface of the first conductive feature 120, 122 or 124 (e.g., MD1) is substantially coplanar with a top surface of the second conductive feature 130 (e.g., MP). In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) or the second conductive feature 130 (e.g., MP) is formed of Tungsten.

In some embodiments, the second conductive feature 130 is in direct electrical contact with the gate structure 108 a. In some embodiments, the second conductive feature 130 is in direct electrical contact with the corresponding first conductive feature 120. The illustrations shown in FIG. 5E are exemplary, and the number of second conductive features 130 varies. In some embodiments, each second conductive feature 130 is electrically connected to more than one first conductive feature. In some embodiments, the top surface of the first conductive feature 120 is coplanar with the top surface of the second conductive feature 130. In some embodiments, the second conductive feature 130 has a tapered shape. In some embodiments, the second conductive feature 130 has an L-shape. In some embodiments, the second conductive feature 130 has a U-shape. In some embodiments, a portion of the second conductive feature 130 is embedded in the first conductive feature 120. In some embodiments, a material of the second conductive feature 130 is substantially similar to the material of the first conductive feature 120. In some embodiments, a portion of the second conductive feature 130 is embedded between the first conductive feature 120, the gate structure 108 a and the pair of first spacers 110 a and 112 a. In some embodiments, the second conductive feature 130 is directly on the first spacer 110 a.

In some embodiments, a further ILD layer 134, referred to herein as an ILD2 layer, is formed over the planarized first conductive feature 120, 122 or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP). Example materials of the ILD layer 134 include, but are not limited to, SiNx, SiOx, SiON, SiC, SiBN, SiCBN, or combinations thereof. In at least one embodiment, the ILD layer 134 is formed using HDP, although other methods such as SACVD, LPCVD, ALD, PEALD, PECVD, MLD, PICVD, spin-on, or the like are used in various embodiments. In some embodiments, a hard mask layer (not shown) is formed over the ILD layer 134. In some embodiments, contact openings are formed in the ILD layer 134 by an etching process to expose underlying first conductive feature 120, 122 or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP).

At operation 516 of the method 500, third conductive feature 132 (e.g., MD2) is formed over the first conductive feature 120, 122 or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP). In some embodiments, the third conductive feature 132 is formed over the gate structures (e.g., first gate structure 108 a or second gate structure 108 b). A conductive material is formed to fill the contact openings, to obtain third conductive feature 132 (e.g., MD2). A resulting semiconductor device structure 600F is obtained as shown in FIG. 6F.

In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) and the third conductive feature 132 (e.g., MD2) are formed of different conductive materials. In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) and the third conductive feature 132 (e.g., MD2) are formed of the same conductive material. In some embodiments, the first conductive feature 120, 122 or 124 (e.g., MD1) and the third conductive feature 132 (e.g., MD2) are formed of tungsten. In some embodiments, the formation of at least one of the first conductive feature 120, 122 or 124 (e.g., MD1) or the third conductive feature 132 (e.g., MD2) includes depositing a glue (or seed) metal layer before filling the corresponding conductive material(s) in the corresponding openings.

The above method(s) include(s) example operations, but the operations in some embodiments are not performed in the order shown. Operations may be added, replaced, changed order, and/or eliminated as appropriate, in accordance with the spirit and scope of embodiments of the disclosure. Embodiments that combine different features and/or different embodiments are within the scope of the disclosure and will be apparent to those of ordinary skill in the art after reviewing this disclosure.

In summary, one or more embodiments implement at least a part of an electrical connection between elements of a semiconductor device in the MO layer. In some embodiments, the second conductive feature (e.g., second conductive feature 130, 230 or 330) is configured to provide a larger contact area to one or more connected gate structures (e.g., gate structure 108 a, 108 b, 108 c or 108 d) when compared with similar conductive features positioned above the gate structure (and located above the first contact feature MD1). In some embodiments, second conductive feature 130 (e.g., MP) is arranged to extend across active region 104 a. In some embodiments, second conductive feature 130 (e.g., MP) is arranged to extend across one or more isolation regions (e.g., isolation structure 104 b or 204). In some embodiments, third conductive feature 132 (e.g., MD2) is arranged to extend across one or more isolation regions (e.g., isolation structure 104 b or 204). In some embodiments, third conductive feature 132 (e.g., MD2) is arranged to extend across active regions 104 a. In some embodiments, third conductive feature 132 (e.g., MD2) is arranged to extend over active region 104 a without being electrically connected to one or more gate structures (e.g., gate structure 108 a, 108 b, 108 c or 108 d). As a result, one or more of manufacturing time, manufacturing cost, manufacturing material, and size of the semiconductor device is/are reduced compared to the other approaches.

In some embodiments, a semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

In some embodiments, an integrated circuit comprising a substrate comprising a source feature, and a drain feature, a first gate structure over a top surface of the substrate, wherein the first gate structure is between the source feature and the drain feature, a second gate structure over the top surface of the substrate, wherein the second gate structure is adjacent to the first gate structure and the source feature, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the source feature or the drain feature, wherein a top surface of the first conductive feature is coplanar with a top surface of the insulating layer, a second conductive feature over the substrate, and a third conductive feature, wherein the third conductive feature is over the first conductive feature or the second conductive feature.

In a method of manufacturing a semiconductor device in accordance with some embodiments, the method comprising forming an active region in a substrate, forming a first gate structure and a second gate structure on a substrate, wherein the second gate structure is adjacent to the first gate structure, forming an insulating layer on the first gate structure and the second gate structure, forming a pair of first spacers on each sidewall of the first gate structure, forming a pair of second spacers on each sidewall of the second gate structure and forming a first conductive feature over the active region.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A structure comprising: a first active region in a substrate; a second active region in the substrate, the second active region being spaced apart from the first active region; a first gate structure over the first and second active regions; a second gate structure over the first and second active regions; a first source/drain region and a second source/drain region in the first active region on opposing sides of the first gate structure; a first conductive contact connected to the first source/drain region; a second conductive contact connected to the second source/drain region; and a first conductive feature over and connected to the first and second conductive contacts, the first conductive feature extending over the second active region.
 2. The structure of claim 1 further comprising: a first insulating layer over the first gate structure, the first insulating layer being interposed between the first gate structure and the first conductive feature.
 3. The structure of claim 2 further comprising: a second conductive feature over and electrically coupled to the the first gate structure, the second conductive feature having a top surface level with a top surface of the first insulating layer.
 4. The structure of claim 3, wherein the second conductive feature is electrically coupled to the first conductive contact.
 5. The structure of claim 3, wherein a portion of the second conductive feature is embedded in the first conductive contact.
 6. The structure of claim 1 further comprising a first set of gate spacers on opposing sides of the first gate structure, the first set of gate spacers being between the first gate structure and the first and second conductive contacts.
 7. The structure of claim 1, wherein the first pair of gate spacers contact the first conductive feature.
 8. The structure of claim 1 further comprising: an isolation region separating the first active region and the second active region, the first conductive feature extending over the first active region.
 9. The structure of claim 1, wherein the first conductive contact has a tapered shape.
 10. The structure of claim 1, wherein the first conductive contact and the second conductive contact comprises tungsten.
 11. A semiconductor device comprising: a first active region in a substrate; a first gate structure over the first active region; a first insulating layer over the first gate structure; a second gate structure over the first active region; a second insulating layer over the second gate structure; a first source/drain region and a second source/drain region in the first active region on opposing sides of the first gate structure; a first conductive contact electrically connected to the first source/drain region; a second conductive contact electrically connected to the second source/drain region; and a first conductive feature extending through the second insulating layer and electrically connected to the first conductive contact and the second gate structure.
 12. The semiconductor device of claim 11 further comprising: a power rail on the substrate, the power rail being spaced apart from the first active region, the first conductive contact extending over the first active region and the power rail.
 13. The semiconductor device of claim 12, wherein the second conductive contact does not extend over the power rail.
 14. The semiconductor device of claim 11 further comprising: a dielectric layer over the first conductive feature and the second insulating layer.
 15. The semiconductor device of claim 13 further comprising: a first spacer on a sidewall of the second gate structure, the first spacer contacting the dielectric layer.
 16. The semiconductor device of claim 11, wherein the first and second insulating layers comprise silicon nitride.
 17. A method comprising: forming a first active region in a substrate; forming a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure over the first active region, each of the first through fourth gate structures having a first insulating layer over the respective gate structure; forming spacers on opposing sidewalls of the first gate structure, the second gate structure, the third gate structure, and the fourth gate structure; forming a first source/drain region and a second source/drain region in the first active region on opposing sides of the second gate structure; forming an interlayer dielectric over the first active region, the first and second source/drain regions, and between each of the first through fourth gate structures; performing an etch process to remove a portion of the interlayer dielectric from between each of the first through fourth gate structures, the etch process recessing the active region between the third and fourth gate structures, the etch process removing a portion of the spacer and the first insulating layer on the first gate structure; forming a first conductive contact between the first and second gate structures, the first conductive contact being electrically coupled to the first source/drain region; forming a second conductive contact between the second and third gate structures, the second conductive contact being electrically coupled to the second source/drain region; and forming a third conductive contact between the third and fourth gate structures and on the recessed portion of active region, the third conductive contact being electrically coupled to the active region.
 18. The method of claim 17, wherein top surfaces of the first conductive contact, the second conductive contact, and the third conductive contact are level with each other.
 19. The method of claim 18, wherein the first insulating layer over the first gate structure has a top surface level with the first conductive contact.
 20. The method of claim 17 further comprising: forming a first conductive feature over the first gate structure, the first conductive feature contacting the first gate structure and the first conductive contact. 